MRFE6S8046NR1 MRFE6S8046GNR1
3
RF Device Data
Freescale Semiconductor
Table 5. Electrical Characteristics (TA
= 25
°C unless otherwise noted)
(continued)
Typical Broadband Performance (In Freescale Test Fixture, 50 ohm system) VDD
= 28 Vdc, I
DQ
= 300
mA, Pout
= 35.5
W CW
Frequency
Gps
(dB)
D
(%)
IRL
(dB)
864 MHz
19.9
58.7
-12
880 MHz
20
58.5
-17
894 MHz
19.8
57.7
-17
Typical Performances
(In Freescale Test Fixture, 50 ohm system) V
DD
= 28 Vdc, IDQ
= 300
mA, 864-894
MHz Bandwidth
Characteristic
Symbol
Min
Typ
Max
Unit
Pout
@ 1 dB Compression Point
P1dB
?
47
?
W
IMD Symmetry @ 41
W PEP, Pout
where IMD Third Order
30 dBc
Intermodulation
(Delta IMD Third Order Intermodulation between Upper and Lower
Sidebands > 2 dB)
IMDsym
?
22
?
MHz
VBW Resonance Point
(IMD Third Order Intermodulation Inflection Point)
VBWres
?
25
?
MHz
Gain Flatness in 30
MHz Bandwidth @ Pout
= 35.5
W CW
GF
?
0.2
?
dB
Gain Variation over Temperature
(-30°C to +85°C)
ΔG
?
0.017
?
dB/°C
Output Power Variation over Temperature
(-30°C to +85°C)
ΔP1dB
?
0.004
?
dBm/°C
Typical GSM EDGE Performances
(In Freescale GSM EDGE
Test Fixture, 50 ohm system) VDD
= 28 Vdc, IDQ
= 285
mA, Pout
= 17.8 W
Avg., 864-894
MHz EDGE Modulation
Frequency
Gps
(dB)
D
(%)
Spectral
Regrowth @
400 kHz
(dBc)
Spectral
Regrowth @
600 kHz
(dBc)
EVM
(% rms)
864 MHz
19.8
43.8
61.2
70.9
2.1
880 MHz
19.9
43.6
63.4
72.5
2
894 MHz
19.8
43.1
63.7
73
2
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